DEFECTS IN MBE AND MOCVD-GROWN GAAS ON SI

被引：0
|
作者：
EAGLESHAM, DJ
DEVENISH, R
FAN, RT
HUMPHREYS, CJ
MORKOC, H
BRADLEY, RR
AUGUSTUS, PD
机构：
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2] PLESSEY RES LTD, CASWELL, ENGLAND
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1987年 / 87期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：105 / 110
页数：6
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