EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE

被引：415
作者：
HEIMAN, FP
WARFIELD, G
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 04期
关键词：
D O I：
10.1109/T-ED.1965.15475
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：167 / &
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