CIRCUIT MODEL FOR GAAS MESFET VALID TO 12 GHZ

[1] ARCHER JA, 1974, DAAB0773C0091 CONTR

[2] BESSER L, 1974, COMPACT MANUAL, P20

[3] CHEN DR, 1974, MITT S

[4] DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) : 510 - 517

[5] VENDELIN GD, 1975, MICROWAVES FEB

[6] Wolf P., 1970, IBM J RES DEV MAR, P125

[1] ARCHER JA, 1974, DAAB0773C0091 CONTR

[2] BESSER L, 1974, COMPACT MANUAL, P20

[3] CHEN DR, 1974, MITT S

[4] DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) : 510 - 517

[5] VENDELIN GD, 1975, MICROWAVES FEB

[6] Wolf P., 1970, IBM J RES DEV MAR, P125