HIGH-PERFORMANCE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED USING REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION OF SIO(2)

A remote plasma chemical vapor deposition (RPCVD) of SiO2 was investigated for forming an interface of SiO2/Si at a low temperature below 300-degrees-C. A good SiO2/Si interface was formed on Si substrates through decomposition and reaction of SiH4 gas with oxygen radical by confining plasma using mesh plates. The density of interface traps (D(it)) was as low as 3.4 x 10(10) cm-2eV-1. N- and p-channel Al-gate poly-Si TFT's were fabricated at 270-degrees-C with SiO2 films as a gate oxide formed by RPCVD and laser crystallized poly-crystalline films formed by a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.5 V (n-channel) and -1.5 V (p-channel), and a high carrier mobility of 400 cm2/Vs.