EXTENDED-STATE MOBILITY AND ITS RELATION TO THE TAIL-STATE DISTRIBUTION IN A-SI-H

被引:29
作者
MICHIEL, H
ADRIAENSSENS, GJ
DAVIS, EA
机构
[1] CATHOLIC UNIV LEUVEN,VASTE STOF & HOGE DRUK FYS LAB,B-3030 HEVERLE,BELGIUM
[2] UNIV LEICESTER,DEPT PHYS,LEICESTER LE1 7RH,ENGLAND
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 04期
关键词
D O I
10.1103/PhysRevB.34.2486
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2486 / 2499
页数:14
相关论文
共 50 条
  • [41] TEMPERATURE DEPENDENCES OF DARK CONDUCTIVITY AND STEADY-STATE PHOTOCONDUCTIVITY OF A-SI-H SAMPLES
    ALTANZOG, P
    BATSUUR, D
    BOLD, S
    BURMAA, B
    CHADRAABAL, S
    KASANSKII, AG
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1989, 112 (01): : K23 - K27
  • [42] IRREVERSIBLE CHANGES IN DOPING EFFICIENCY AND HYDROGEN-BONDING IN THE EQUILIBRIUM STATE OF A-SI-H
    DENG, XM
    PHYSICAL REVIEW B, 1991, 43 (06): : 4820 - 4826
  • [43] ACCELERATED HYDROGEN MIGRATION UNDER STEADY-STATE AND PULSED ILLUMINATION IN A-SI-H
    SANTOS, PV
    BRANDT, MS
    STREET, RA
    STUTZMANN, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 273 - 276
  • [44] STEADY-STATE OPTICAL MODULATION SPECTROSCOPY OF P-TYPE A-SI-H
    HERREMANS, H
    GREVENDONK, W
    PHYSICAL REVIEW B, 1994, 50 (11): : 7422 - 7427
  • [45] NONRADIATIVE RECOMBINATION AND ITS INFLUENCE ON THE LIFETIME DISTRIBUTION IN AMORPHOUS-SILICON (A-SI-H)
    STACHOWITZ, R
    SCHUBERT, M
    FUHS, W
    PHYSICAL REVIEW B, 1995, 52 (15): : 10906 - 10914
  • [46] GAP-STATE DISTRIBUTION IN NORMAL-TYPE AND PARA-TYPE A-SI-H FROM OPTICAL-ABSORPTION
    PIERZ, K
    HILGENBERG, B
    MELL, H
    WEISER, G
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 63 - 66
  • [47] URBACH TAIL AND GAP STATE DISTRIBUTION IN AS-DEPOSITED AND ANNEALED A-(C-SI-GE)-H ALLOYS
    DEMICHELIS, F
    KANIADAKIS, G
    SPAGNOLO, R
    TRESSO, E
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 60 (05): : 713 - 720
  • [48] Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors
    Takechi, Kazushige
    Nakata, Mitsuru
    Eguchi, Toshimasa
    Yamaguchi, Hirotaka
    Kaneko, Setsuo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (09) : 2165 - 2168
  • [49] PAS STUDY OF GAP-STATE PROFILES OF P-DOPED AND UNDOPED A-SI-H
    TANAKA, K
    YAMASAKI, S
    SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 277 - 283
  • [50] PSEUDOGAP STATE DENSITY IN SPUTTERED A-SI-H FROM FIELD-EFFECT AND CAPACITANCE MEASUREMENTS
    WEISFIELD, R
    VIKTOROVITCH, P
    ANDERSON, DA
    PAUL, W
    APPLIED PHYSICS LETTERS, 1981, 39 (03) : 263 - 265