A sub-1 V high-precision CMOS bandgap voltage reference

被引：2
作者：
Liao, Jun [1 ]
Zhao, Yiqiang [1 ]
Geng, Junfeng [1 ]
机构：
[1] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2012年 / 33卷 / 02期
关键词：
bandgap reference; curvature compensation; low power supply; low temperature coefficient;
D O I：
10.1088/1674-4926/33/2/025014
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A third-order, sub-1 V bandgap voltage reference design for low-power supply, high-precision applications is presented. This design uses a current-mode compensation technique and temperature-dependent resistor ratio to obtain high-order curvature compensation. The circuit was designed and fabricated by SMIC 0.18 mu m CMOS technology. It produces an output reference of 713.6 mV. The temperature coefficient is 3.235 ppm/degrees C in the temperature range of -40 to 120 degrees C, with a line regulation of 0.199 mV/V when the supply voltage varies from 0.95 to 3 V. The average current consumption of the whole circuit is 49 mu A at the supply voltage of 1 V.
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页数：5
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