CHEMICAL-VAPOR-DEPOSITION OF TISI2 USING SIH4 AND TICL4

被引:12
作者
MENDICINO, MA [1 ]
SOUTHWELL, RP [1 ]
SEEBAUER, EG [1 ]
机构
[1] UNIV ILLINOIS,DEPT CHEM ENGN,URBANA,IL 61801
关键词
CHEMICAL VAPOR DEPOSITION; GROWTH MECHANISM; SILICIDES;
D O I
10.1016/0040-6090(94)90369-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An experimental approach for optimizing process parameters for TiSi2 chemical vapor deposition is described that combines measurements under ultrahigh vacuum conditions and at normal processing pressures. This approach has given an unprecedentedly detailed view of the chemical mechanisms underlying this deposition system.
引用
收藏
页码:473 / 478
页数:6
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