DEPOSITION OF COPPER-FILMS ON SILICON SUBSTRATES - FILM PURITY AND SILICIDE FORMATION

被引:25
|
作者
PADIYATH, R [1 ]
SETH, J [1 ]
BABU, SV [1 ]
机构
[1] CLARKSON UNIV, CTR ADV MAT PROC, POTSDAM, NY 13699 USA
关键词
D O I
10.1063/1.353137
中图分类号
O59 [应用物理学];
学科分类号
摘要
Deposition of copper films on silicon substrates by the radio-frequency plasma reduction of spin-coated copper formate films in hydrogen and oxygen plasma discharges has been investigated further. The atomic compositions of these films, determined by Auger electron and x-ray photoelectron spectroscopy, were found to be a strong function of the processing conditions, especially power density and temperature. Rutherford backscattering studies (RBS) of the silicon-copper interface revealed the formation of copper silicide at deposition temperatures that are nominally as low as 40-degrees-C. The silicide formation was further investigated by depositing pure copper films on silicon substrates by thermal evaporation. The Cu/Si interface was analyzed before and after in situ annealing at 300-degrees-C and 10(-8) Torr and compared with the results for the plasma deposited films. RBS data show that diamondlike carbon films are excellent diffusion barriers between Si and Cu.
引用
收藏
页码:2326 / 2332
页数:7
相关论文
共 50 条
  • [21] Formation of Nanoporous Copper-Silicide Films
    Buchin, E. Yu.
    Naumov, V. V.
    Vasilyev, S. V.
    SEMICONDUCTORS, 2019, 53 (03) : 395 - 399
  • [22] SELECTIVE ELECTROLESS COPPER METALLIZATION OF PALLADIUM SILICIDE ON SILICON SUBSTRATES
    MAK, CY
    MILLER, B
    FELDMAN, LC
    WEIR, BE
    HIGASHI, GS
    FITZGERALD, EA
    BOONE, T
    DOHERTY, CJ
    VANDOVER, RB
    APPLIED PHYSICS LETTERS, 1991, 59 (26) : 3449 - 3451
  • [23] ENHANCED METAL-CERAMIC ADHESION BY SEQUENTIAL SPUTTER DEPOSITION AND PULSED LASER MELTING OF COPPER-FILMS ON SAPPHIRE SUBSTRATES
    PEDRAZA, AJ
    GODBOLE, MJ
    LOWNDES, DH
    THOMPSON, JR
    JOURNAL OF MATERIALS SCIENCE, 1989, 24 (01) : 115 - 123
  • [24] OPTICAL PROPERTIES OF PT AND PLATINUM SILICIDE FILMS ON SILICON SUBSTRATES
    VERLEUR, HW
    LEPSELTE.MP
    SZE, SM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 456 - &
  • [25] Formation of cobalt silicide films by ion beam deposition
    Zhang, Y
    McCeady, DE
    Wang, CM
    Young, J
    McKinley, MI
    Whitlow, HJ
    Razpet, A
    Possnert, G
    Zhang, T
    Wu, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2): : 602 - 604
  • [26] OPTICAL-PROPERTIES OF DISCONTINUOUS COPPER-FILMS ON DIELECTRIC SUBSTRATES - A RENORMALIZATION APPROACH
    DOBIERZEWSKAMOZRZYMAS, E
    BIEGANSKI, P
    PIECIUL, E
    VACUUM, 1994, 45 (2-3) : 279 - 283
  • [27] ION-SCATTERING CHARACTERIZATION OF THE OXIDATION OF THIN COPPER-FILMS ON GOLD SUBSTRATES
    MILLER, AC
    CZANDERNA, AW
    APPLIED SURFACE SCIENCE, 1980, 4 (3-4) : 481 - 491
  • [28] DEPENDENCE OF DEFECT DENSITY AND ACTIVATION-ENERGY ON DEPOSITION RATES IN COPPER-FILMS
    NARAYANDAS, K
    RADHAKRISHNAN, M
    BALASUBRAMANIAN, C
    JOURNAL OF MATERIALS SCIENCE, 1981, 16 (02) : 549 - 552
  • [29] CONTROL OF MICROSTRUCTURE AND PROPERTIES OF COPPER-FILMS USING ION-ASSISTED DEPOSITION
    ROY, RA
    CUOMO, JJ
    YEE, DS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1621 - 1626
  • [30] FORMATION OF CVD COPPER-FILMS INVESTIGATED BY SURFACE-ANALYSIS AND REFLECTIVITY
    HAMMADI, Z
    LECOHIER, B
    CROS, A
    DALLAPORTA, H
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C3): : 91 - 98