DEPOSITION OF COPPER-FILMS ON SILICON SUBSTRATES - FILM PURITY AND SILICIDE FORMATION

被引：27

作者：

PADIYATH, R ^{[1
]}

SETH, J ^{[1
]}

BABU, SV ^{[1
]}

机构：

[1] CLARKSON UNIV, CTR ADV MAT PROC, POTSDAM, NY 13699 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.353137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deposition of copper films on silicon substrates by the radio-frequency plasma reduction of spin-coated copper formate films in hydrogen and oxygen plasma discharges has been investigated further. The atomic compositions of these films, determined by Auger electron and x-ray photoelectron spectroscopy, were found to be a strong function of the processing conditions, especially power density and temperature. Rutherford backscattering studies (RBS) of the silicon-copper interface revealed the formation of copper silicide at deposition temperatures that are nominally as low as 40-degrees-C. The silicide formation was further investigated by depositing pure copper films on silicon substrates by thermal evaporation. The Cu/Si interface was analyzed before and after in situ annealing at 300-degrees-C and 10(-8) Torr and compared with the results for the plasma deposited films. RBS data show that diamondlike carbon films are excellent diffusion barriers between Si and Cu.

引用

页码：2326 / 2332

页数：7

共 30 条

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