CW MM-WAVE GAAS TUNNETT DIODE

被引：4

作者：

POBL, M ^{[1
]}

DALLE, C ^{[1
]}

FREYER, J ^{[1
]}

HARTH, W ^{[1
]}

机构：

[1] UNIV SCI & TECH LILLE FLANDRES ARTOIS,CTR HYPERFREQUENCES & SEMICOND,F-59655 VILLENEUVE DASCQ,FRANCE

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 18期

关键词：

Gallium arsenide; Millimetrewave; Oscillator; Transit-timediode; Tunnel effect;

D O I：

10.1049/el:19900989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs single-drift TUNNETT diodes have been grown by MBE. For the first time CW-output power has been achieved in the V and W-bands. The best performance achieved 25 mW associated with a conversion efficiency of 2-8% at 70 GHz. Good agreement between experimental findings and theoretical predictions obtained by means of a drift-diffusion model is demonstrated. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1540 / 1542

页数：3

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