IMPURITY BARRIER PROPERTIES OF REOXIDIZED NITRIDED OXIDE-FILMS FOR USE WITH P+-DOPED POLYSILICON GATES

被引：36

作者：

CABLE, JS ^{[1
]}

MANN, RA ^{[1
]}

WOO, JCS ^{[1
]}

机构：

[1] TRW CO INC,CTR MICROELECTR,REDONDO BEACH,CA 90278

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 03期

关键词：

D O I：

10.1109/55.75733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impurity barrier properties of thin reoxidized nitrided oxide (ONO) gate dielectrics formed by rapid thermal processing to boron penetration resulting from p+ poly gate processing is investigated. Measurements comparing the threshold voltage instability of capacitors fabricated with BF2 implanted poly gates subjected to various post-gate thermal cycles have been performed. The ONO gate dielectrics are found to be an excellent impurity barrier to boron diffusion, even in the presence of fluorine. The extent of the nitridation is also found to affect the diffusion barrier properties, with the highest temperature nitridations forming the best barriers. Reoxidation of the nitrided films reduces the barrier properties somewhat, but remarkable improvement is still observed over SiO2.

引用

页码：128 / 130

页数：3