DIFFUSION OF ATOMIC SILICON IN GALLIUM-ARSENIDE

被引：85

作者：

SCHUBERT, EF

STARK, JB

CHIU, TH

TELL, B

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.99917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：293 / 295

页数：3

共 7 条

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[2]

Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

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GIBBONS, JF .

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[6] CLOSED-TUBE DIFFUSION OF SILICON IN GAAS FROM SPUTTERED SILICON FILM [J].

OMURA, E ;

WU, XS ;

VAWTER, GA ;

COLDREN, L ;

HU, E ;

MERZ, JL .

ELECTRONICS LETTERS, 1986, 22 (09) :496-498

[7] SPATIAL LOCALIZATION OF IMPURITIES IN DELTA-DOPED GAAS [J].

SCHUBERT, EF ;

STARK, JB ;

ULLRICH, B ;

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APPLIED PHYSICS LETTERS, 1988, 52 (18) :1508-1510

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