CHARACTERIZATION OF N-TYPE GAAS EPILAYERS ON SEMIINSULATING GAAS SUBSTRATES

被引：0
作者：
BOTHA, AF
ENGELBRECHT, JAA
WATTERS, VJ
机构：
来源：
SOUTH AFRICAN JOURNAL OF SCIENCE | 1991年 / 87卷 / 09期
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暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The classical dispersion theory was used for the analysis of the dielectric constants of layered GaAs structures in the infrared region, for which a two-oscillator model was assumed. Application of this model not only enabled the determination of the thicknesses of n-type GaAs epilayers grown on 2-degrees off (100) semi-insulating (SI) GaAs substrates, but also yielded the dielectric constants, free-carrier concentrations and carrier mobilities of the epilayers. In addition, the refractive index of semi-insulating GaAs was calculated as a function of frequency.
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页码：453 / 456
页数：4
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