CHARACTERIZATION OF THIN ZINC-RICH AND OXYGEN-RICH ZINC-OXIDE LAYERS

被引：17

作者：

GRUNZE, M ^{[1
]}

HIRSCHWALD, W ^{[1
]}

THULL, E ^{[1
]}

机构：

[1] FREE UNIV BERLIN,INST PHYS CHEM,D-1000 BERLIN 33,FED REP GER

来源：

关键词：

D O I：

10.1016/0040-6090(76)90605-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：351 / 356

页数：6

共 7 条

[1]

CHORICUA C, 1965, 4TH INT C CAT MOSC

[2] TEMPERATURE DEPENDANCE OF ESR-SPECTRUM OF ZINC VACANCY IN ZNO [J].

GALLAND, D ;

HERVE, A .

[3] KINETICS OF THERMAL DISSOCIATION OF ZINC OXIDE [J].

HIRSCHWALD, W ;

STOLZE, F .

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1972, 77 (1-6) :21-+

[4]

HIRSCHWALD W, 1962, Z ELEKTROCHEM, V66, P29

[5] ELECTRON-SPIN RESONANCE OF LATTICE-DEFECTS IN ZINC-OXIDE [J].

HOFFMANN, K ;

HAHN, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 24 (02) :637-648

[6]

SAUCIER KM, 1966, J CATAL, V5, P314

[7] THERMOLUMINESCENCE OF ZNO [J].

SEITZ, MA ;

PINTER, WF ;

HIRTHE, WM .