GROWTH OF BETA-SIC LAYERS BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

被引：2

作者：

CHIEW, SP

MCBRIDE, G

ARMSTRONG, BM

GRIMSHAW, J

GAMBLE, HS

TROCHAGRIMSHAW, J

机构：

[1] Northern Ireland Semiconductor Research Centre, Department of Electrical and Electrical Engineering, The Queen's University of Belfast, Belfast, BT9 5AH, Ashby Building, Stranmillis Road

[2] School of Chemistry, The Queen's University of Belfast, Belfast, BT9 5AH, David Keir Building, Stranmillis Rd.

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 25卷 / 2-4期

关键词：

Semiconductor growth;

D O I：

10.1016/0167-9317(94)90014-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A rapid thermal chemical vapour deposition system has been employed for the deposition of SiC layers in the temperature range 1000-1040-degrees-C. Layers have been shown to be polycrystalline beta-SiC strongly aligned to the silicon substrate. Carbon content has been controlled over the range 6-50% and U.V. spectroscopy has related carbon content to cut off wavelength. Oxygen content in layers has been minimised and shown to be related to carbon concentration. Growth has occurred initially at localised preferred sites and time periods in excess of 60 seconds have been shown necessary at 1040-degrees-C to achieve growth of SiC over the entire surface area.

引用

页码：177 / 182

页数：6