NEW TECHNIQUE TO DETECT THE GAAS SEMIINSULATING SURFACE-PROPERTY - CW ELECTROOPTIC PROBING

被引：6

作者：

LO, YH ^{[1
]}

ZHU, ZH ^{[1
]}

PAN, CL ^{[1
]}

WANG, SY ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1125 / 1127

页数：3

共 8 条

[1] MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS [J].

CHANG, MF ;

LEE, CP ;

HOU, LD ;

VAHRENKAMP, RP ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :869-871

[2] CHANGE OF THE SURFACE-DENSITY OF THE MIDGAP LEVEL(EL2 OR EL0) IN BULK GAAS BY HEAT-TREATMENTS WITH VARIOUS CAPPING [J].

HASEGAWA, F ;

YAMAMOTO, N ;

NANNICHI, Y .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :461-463

[3] COMPUTER-AIDED ANALYSIS OF GAAS N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER [J].

HORIO, K ;

IKOMA, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1242-1250

[4]

KAKRAMEBEID S, 1985, IEEE T ELECTRON DEVI, V32, P632

[5]

Ma W., UNPUB

[6] INHOMOGENEITY OF THE DEEP CENTER EL2 IN GAAS OBSERVED BY DIRECT INFRARED IMAGING [J].

SKOLNICK, MS ;

BROZEL, MR ;

REED, LJ ;

GRANT, I ;

STIRLAND, DJ ;

WARE, RM .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :107-125

[7]

YARIV A, 1975, QUANTUM ELECTRONICS

[8] NEW MEASUREMENT TECHNIQUE - CW ELECTROOPTIC PROBING OF ELECTRIC-FIELDS [J].

ZHU, ZH ;

WEBER, JP ;

WANG, SY ;

WANG, S .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :432-434

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