ELECTRONIC STATES AND SCHOTTKY BARRIERS AT PD2SI/SI(111) INTERFACES

被引：8

作者：

HERMAN, F

CASULA, F

KASOWSKI, RV

机构：

[1] UNIV CAGLIARI,INST PHYS,I-09100 CAGLIARI,ITALY

[2] EXPTL STN,WILMINGTON,DE 19898

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90668-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：837 / 839

页数：3

共 16 条

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[8] ELECTRONIC STATES AND MICROSTRUCTURE AT THE SILICIDE-SILICON INTERFACE [J].

HO, PS ;

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[9] ELECTRONIC-STRUCTURE OF A PD MONOLAYER ON AN SI(111) SURFACE [J].

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[10] SCHOTTKY BARRIERS AND PLASMONS [J].

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