MONOLITHIC INTEGRATION OF INGAASP/INP LED AND TRANSISTOR - A LIGHT-COUPLED BISTABLE ELECTRO-OPTICAL DEVICE

被引：17

作者：

GROTHE, H

PROEBSTER, W

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1049/el:19830135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：194 / 196

页数：3

共 8 条

[1] MONOLITHIC INTEGRATION OF OPTOELECTRONIC, ELECTRONIC AND PASSIVE COMPONENTS IN GAALAS/GAAS MULTILAYERS [J].

CARTER, AC ;

FORBES, N ;

GOODFELLOW, RC .

ELECTRONICS LETTERS, 1982, 18 (02) :72-74

[2] P-N-P-N OPTICAL DETECTORS AND LIGHT-EMITTING-DIODES [J].

COPELAND, JA ;

DENTAI, AG ;

LEE, TP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) :810-813

[3] MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR [J].

FUKUZAWA, T ;

NAKAMURA, M ;

HIRAO, M ;

KURODA, T ;

UMEDA, J .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :181-183

[4]

Grothe H., 1982, Journal of Optical Communications, V3, P63, DOI 10.1515/JOC.1982.3.2.63

[5] BISTABLE OPTICAL-DEVICE USING A LIGHT-EMITTING DIODE [J].

OGAWA, Y ;

ITO, H ;

INABA, H .

APPLIED OPTICS, 1982, 21 (11) :1878-1880

[6] NEW BISTABLE OPTICAL-DEVICE USING SEMICONDUCTOR-LASER DIODE [J].

OGAWA, Y ;

ITO, H ;

INABA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :L646-L648

[7] MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

URY, I ;

MARGALIT, S ;

YUST, M ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1979, 34 (07) :430-431

[8]

WADA O, 1982, IEEE ELECTRON DEVICE, V3, P305

← 1 →