MONOLITHIC INTEGRATION OF INGAASP/INP LED AND TRANSISTOR - A LIGHT-COUPLED BISTABLE ELECTRO-OPTICAL DEVICE

被引：17

作者：

GROTHE, H

PROEBSTER, W

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1049/el:19830135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：194 / 196

页数：3

相关论文

共 8 条

[1] MONOLITHIC INTEGRATION OF OPTOELECTRONIC, ELECTRONIC AND PASSIVE COMPONENTS IN GAALAS/GAAS MULTILAYERS
CARTER, AC
FORBES, N
GOODFELLOW, RC
[J]. ELECTRONICS LETTERS, 1982, 18 (02) : 72 - 74
[2] P-N-P-N OPTICAL DETECTORS AND LIGHT-EMITTING-DIODES
COPELAND, JA
DENTAI, AG
LEE, TP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) : 810 - 813
[3] MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR
FUKUZAWA, T
NAKAMURA, M
HIRAO, M
KURODA, T
UMEDA, J
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 181 - 183
[4] Grothe H., 1982, Journal of Optical Communications, V3, P63, DOI 10.1515/JOC.1982.3.2.63
[5] BISTABLE OPTICAL-DEVICE USING A LIGHT-EMITTING DIODE
OGAWA, Y
ITO, H
INABA, H
[J]. APPLIED OPTICS, 1982, 21 (11): : 1878 - 1880
[6] NEW BISTABLE OPTICAL-DEVICE USING SEMICONDUCTOR-LASER DIODE
OGAWA, Y
ITO, H
INABA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L646 - L648
[7] MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
URY, I
MARGALIT, S
YUST, M
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (07) : 430 - 431
[8] WADA O, 1982, IEEE ELECTRON DEVICE, V3, P305