TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS

被引:447
作者
CHADI, DJ
COHEN, ML
机构
[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720
[2] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1975年 / 68卷 / 01期
关键词
D O I
10.1002/pssb.2220680140
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:405 / 419
页数:15
相关论文
共 23 条
[1]   CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, J ;
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (06) :2786-2794
[2]   ELECTRONIC-STRUCTURE OF GAAS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1974, 32 (12) :674-677
[3]   HIGH-RESOLUTION BAND-STRUCTURE AND E2 PEAK IN GE [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1973, 31 (27) :1582-1585
[4]   CALCULATED VALENCE BAND DENSITY OF STATES AND REFLECTIVITY FOR ZNSE [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICS LETTERS A, 1974, A 47 (01) :7-8
[5]  
CHELIKOWSKY JR, TO BE PUBLISHED
[6]   FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J].
DRESSELHAUS, G ;
DRESSELHAUS, MS .
PHYSICAL REVIEW, 1967, 160 (03) :649-+
[7]   PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL [J].
EASTMAN, DE ;
GROBMAN, WD ;
FREEOUF, JL ;
ERBUDAK, M .
PHYSICAL REVIEW B, 1974, 9 (08) :3473-3488
[8]  
HALL GG, 1952, PHILOS MAG, V43, P338
[9]  
HALL GG, 1958, PHILOS MAG, V3, P429
[10]   BOND-ORBITAL MODEL .2. [J].
HARRISON, WA ;
CIRACI, S .
PHYSICAL REVIEW B, 1974, 10 (04) :1516-1527