THERMAL OXIDATION OF SILICON - GROWTH MECHANISM AND INTERFACE PROPERTIES

被引：28
作者：
REVESZ, AG
机构：
来源：
PHYSICA STATUS SOLIDI | 1967年 / 19卷 / 01期
关键词：
D O I：
10.1002/pssb.19670190122
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：193 / +
页数：1
相关论文
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