MAXIMUM BLOCKING CAPABILITY OF SILICON THYRISTORS

被引：22

作者：

HERLET, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 08期

关键词：

D O I：

10.1016/0038-1101(65)90034-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：655 / &

共 24 条

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HERLET A, 1964, SIEMENS-Z, V38, P843

[9] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

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PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[10] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES [J].

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