BIPOLAR-TRANSISTOR FABRICATION IN LOW-TEMPERATURE (745-DEGREES-C) ULTRA-LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED EPITAXIAL SILICON

被引：20
作者：
BURGER, WR
COMFORT, JH
GARVERICK, LM
YEW, TR
REIF, R
机构：
[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
[2] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期
关键词：
D O I：
10.1109/EDL.1987.26590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：168 / 170
页数：3
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