GENERALIZED NORDE PLOT INCLUDING DETERMINATION OF THE IDEALITY FACTOR

被引：190

作者：

BOHLIN, KE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1223 / 1224

页数：2

相关论文

共 6 条

[1] FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

CIBILS, RM ;

BUITRAGO, RH .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1075-1077

[2] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[3] AN IMPROVED FORWARD IV METHOD FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

LIEN, CD ;

SO, FCT ;

NICOLET, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1502-1503

[4] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

NORDE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053

[5]

SATO K, 1985, J APPL PHYS, V58, P3658

[6] SCHOTTKY RECTIFIERS ON SILICON USING HIGH BARRIERS [J].

STOLT, L ;

BOHLIN, K ;

TOVE, PA ;

NORDE, H .

SOLID-STATE ELECTRONICS, 1983, 26 (04) :295-297