GROUND-STATE PROPERTIES OF POLYTYPES OF SILICON-CARBIDE

被引：53
作者：
DENTENEER, PJH
VANHAERINGEN, W
机构：
来源：
PHYSICAL REVIEW B | 1986年 / 33卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.33.2831
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：2831 / 2834
页数：4
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