3-DIMENSIONAL MICROMACHINING OF SILICON PRESSURE SENSOR INTEGRATING RESONANT STRAIN-GAUGE ON DIAPHRAGM

被引：47

作者：

IKEDA, K

KUWAYAMA, H

KOBAYASHI, T

WATANABE, T

NISHIKAWA, T

YOSHIDA, T

HARADA, K

机构：

[1] Corporate R, D Department 3, Yokogawa Electric Corporation, Musashino-shi, Tokyo, 180

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87078-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method of fabricating a novel pressure sensor is presented. The sensor has resonant strain gauges built into micro vacuum cavities on the surface of the diaphragm. The resonant strain gauge has a resonator the natural frequency of which is modulated by the strain in the diaphragm surface. The resonator and the vacuum cavity of the strain gauge are fabricated by a self-aligning selective epitaxial method and a hybrid selective etching method; a unique vacuum-sealing technique is used to make the vacuum cavity. © 1990.

引用

页码：1007 / 1010

页数：4

共 10 条

[1]

ALBERT WC, 1984, 38TH ANN FREQ CONTR, P233

[2] SENSITIVITY AND MODE SPECTRUM OF A FREQUENCY-OUTPUT SILICON PRESSURE SENSOR [J].

ANDRES, MV ;

FOULDS, KWH ;

TUDOR, MJ .

SENSORS AND ACTUATORS, 1988, 15 (04) :417-426

[3] ETCHED SILICON VIBRATING SENSOR [J].

GREENWOOD, JC .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1984, 17 (08) :650-652

[4]

IKEDA K, 1988, 7TH SENS S TOK, P193

[5]

IKEDA K, P SICE 86 TOKYO, P561

[6] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].

JASTRZEBSKI, L ;

CORBOY, JF ;

MCGINN, JT ;

PAGLIARO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1571-1580

[7]

SEIDEL H, 1987, 4TH P INT C SOL STAT, P120

[8]

SMITS JG, 1985, 3RD P INT C SOL STAT, P93

[9]

THONTON KEB, 1988, ELECTRON LETT, V24, P573

[10]

WAGGENER HA, 1970, BELL SYST TECH J, P470

← 1 →