ANALYSIS OF ELECTRON-MOBILITY AND RESISTIVITY VERSUS DOPANT DENSITY AND TEMPERATURE IN N-TYPE SILICON

被引：0
作者：
LI, SS [1 ]
机构：
[1] UNIV FLORIDA,GAINESVILLE,FL 32601
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：317 / 317
页数：1
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