ANALYSIS OF ELECTRON-MOBILITY AND RESISTIVITY VERSUS DOPANT DENSITY AND TEMPERATURE IN N-TYPE SILICON

被引：0
|
作者：
LI, SS [1 ]
机构：
[1] UNIV FLORIDA,GAINESVILLE,FL 32601
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：317 / 317
页数：1
相关论文
共 50 条
  • [21] ELECTRON-MOBILITY IN SUPERCRITICAL PROPANE AS A FUNCTION OF DENSITY AND TEMPERATURE
    NISHIKAWA, M
    HOLROYD, RA
    JOURNAL OF CHEMICAL PHYSICS, 1982, 77 (09): : 4678 - 4682
  • [22] Control of n-type dopant transitions in low-temperature silicon epitaxy
    Kamins, TI
    Lefforge, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) : 674 - 678
  • [23] INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON.
    Vavilov, V.S.
    Glaxman, V.B.
    Isaev, N.U.
    Mukashev, B.N.
    Spitsyn, A.V.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 303 - 305
  • [24] ELECTRON-MOBILITY IN PURE N-TYPE INSB IN 20-77 DEGREE K RANGE
    GERSHENZ.EM
    KURILENK.IN
    LITVAKGO.LB
    RABINOVI.RI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1005 - 1008
  • [25] ON THERMALLY ACTIVATED ELECTRON-MOBILITY IN N-TYPE HG0.8CD0.2TE
    HERLACH, F
    DEVOS, G
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (34): : 5901 - 5903
  • [26] RELATIONSHIP BETWEEN MELT COMPOSITION, DISLOCATIONS, PRECIPITATES AND ELECTRON-MOBILITY IN N-TYPE LEC GAAS
    FORNARI, R
    FRIGERI, C
    GLEICHMANN, R
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S31 - S31
  • [27] Silicon As an Unexpected n-Type Dopant in BiCuSeO Thermoelectrics
    Shen, Jiahong
    Chen, Yue
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (33) : 27372 - 27376
  • [28] Contact resistivity of n-type amorphous silicon electron contacts in silicon heterojunction solar cells
    Weigand, William
    Leilaeioun, Ashling
    Tien Ngo
    Mercado, Stefen
    Holman, Zachary C.
    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 3905 - 3907
  • [29] ELECTRON-MOBILITY AND DRAG EFFECT IN P-TYPE SILICON
    MOROHASHI, M
    SAWAKI, N
    AKASAKI, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (06): : 732 - 736
  • [30] ELECTRON-MOBILITY IN N-TYPE HG1-XCDXTE AND HG1-XZNXTE ALLOYS
    PATTERSON, JD
    GOBBA, WA
    LEHOCZKY, SL
    JOURNAL OF MATERIALS RESEARCH, 1992, 7 (08) : 2211 - 2218
12345