ANALYSIS OF ELECTRON-MOBILITY AND RESISTIVITY VERSUS DOPANT DENSITY AND TEMPERATURE IN N-TYPE SILICON

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作者：

LI, SS ^{[1
]}

机构：

[1] UNIV FLORIDA,GAINESVILLE,FL 32601

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 03期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

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页码：317 / 317

页数：1

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