THE INFLUENCE OF DOSE-RATE AND ANALYSIS PROCEDURES ON MEASURED DAMAGE IN P+ ION-IMPLANTED GAAS

被引：16
作者：
CARTER, G [1 ]
NOBES, MJ [1 ]
TASHLYKOV, IS [1 ]
机构：
[1] UNIV SALFORD,THIN FILM & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND
来源：
RADIATION EFFECTS LETTERS | 1984年 / 85卷 / 01期
关键词：
D O I：
10.1080/01422448408209676
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：37 / 43
页数：7
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