ELECTRON TRAPPING IN THIN-FILMS OF THERMAL SIO2 AT TEMPERATURES BETWEEN 30-K AND 300-K

被引：11

作者：

ITSUMI, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.332247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1930 / 1936

页数：7

共 30 条

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