GROWTH OF GAAS ON SI USING IONIZED CLUSTER BEAM TECHNIQUE

被引:16
作者
KIM, K
SUNG, MY
HSIEH, KC
COWELL, EW
FENG, MS
CHENG, KY
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.575842
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:792 / 795
页数:4
相关论文
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