HIGH MOBILITY IN LIQUID-PHASE EPITAXIAL INGAASP FREE OF COMPOSITION MODULATIONS

被引：19

作者：

QUILLEC, M

BENCHIMOL, JL

SLEMPKES, S

LAUNOIS, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 10期

关键词：

D O I：

10.1063/1.93775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：886 / 887

页数：2

共 10 条

[1]

DECREMOUX B, 1981, I PHYS C SER, V56, P115

[2] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS [J].

GREENE, PD ;

WHEELER, SA ;

ADAMS, AR ;

ELSABBAHY, AN ;

AHMAD, CN .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :78-80

[3]

HAYES JR, 1982, J ELECTRON MATER, V11, P155, DOI 10.1007/BF02654614

[4] COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES [J].

HENOC, P ;

IZRAEL, A ;

QUILLEC, M ;

LAUNOIS, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :963-965

[5] LPE GROWTH OF HIGH-PURITY INP AND IN1-XGAXP1-YASY [J].

KUPHAL, E ;

POCKER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :133-142

[6]

LAUNOIS H, 1982, GAAS RELATED COMPOUN

[7] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J].

LEHENY, RF ;

BALLMAN, AA ;

DEWINTER, JC ;

NAHORY, RE ;

POLLACK, MA .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :561-568

[8] CALCULATION OF MISCIBILITY GAP IN QUATERNARY INGAPAS WITH STRICTLY REGULAR SOLUTION APPROXIMATION [J].

ONABE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :797-798

[9] INXGA1-XASYP1-Y ALLOY STABILIZATION BY THE INP SUBSTRATE INSIDE AN UNSTABLE REGION IN LIQUID-PHASE EPITAXY [J].

QUILLEC, M ;

DAGUET, C ;

BENCHIMOL, JL ;

LAUNOIS, H .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :325-326

[10] MISCIBILITY GAPS IN QUATERNARY-III-V ALLOYS [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :194-202

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