STRUCTURAL AND MAGNETOTRANSPORT PROPERTIES OF INGAAS/INALAS HETEROSTRUCTURES GROWN ON LINEARLY-GRADED AL(INGA)AS BUFFERS ON GAAS

被引：0

作者：

GOLDMAN, RS ^{[1
]}

CHEN, JH ^{[1
]}

KAVANAGH, KL ^{[1
]}

WIEDER, HH ^{[1
]}

ROBBINS, VM ^{[1
]}

MILLER, JN ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the structural and magnetotransport properties of modulation-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructures grown by molecular beam epitaxy on GaAs (001) by means of linearly-graded Al-0.48(InzGa1-z)(0.52)As buffer layers. Studies by double-crystal x-ray diffraction and transmission electron microscopy indicate that the linearly-graded buffer is similar to 90% strain-relaxed in both [110] inplane directions with an epilayer tilt of 0.5 degrees about the [($) over bar 110] axis, and threading dislocation or stacking fault defect density approximately 10(7)/cm(2). The peak 1.6K apparent electron mobility, determined from Hall measurements in the [($) over bar 110] direction, 1.1 x 10(5)cm(2)/V-s, is comparable to the highest low-temperature mobility reported for a similar heterojunction grown on InP [7], and is consistent with the theoretical alloy-scattering limited mobility for such heterojunctions [8],[9]. Analysis of 1.6K Shubnikov de Haas oscillatory magnetoresistance measurements indicates two-subband occupation of the two-dimensional electron gas.

引用

页码：313 / 318

页数：6

共 23 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J].