ELECTRONIC-PROPERTIES OF SURFACES IN A-SI-H

[71] EFFECT OF ADSORBATES AND INSULATING LAYERS ON THE CONDUCTANCE OF PLASMA DEPOSITED A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 575 - 580

[72] EFFECT OF ADSORBED GASES ON CONDUCTANCE OF AMORPHOUS FILMS OF SEMICONDUCTING SILICON-HYDROGEN ALLOYS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 353 - 356

[73] ADSORBATE EFFECTS ON THE ELECTRICAL CONDUCTANCE OF A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 435 - 462

[74] PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED A-SI-H [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 375 - 378

[75] CHARGE INJECTION INTO SIO2 DURING FIELD-EFFECT AND PHOTO-FIELD-EFFECT MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 440 - 445

[76] BULK AND SURFACE-STATES ANALYSIS IN A-SI-H BY SCHOTTKY AND MIS TUNNEL-DIODES CAPACITANCE AND CONDUCTANCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1392 - 1404

[77] PHOTOEMISSION STUDY OF EFFECT OF BULK DOPING AND OXYGEN EXPOSURE ON SILICON SURFACE STATES [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1512 - 1515

[78] PSEUDOGAP STATE DENSITY IN SPUTTERED A-SI-H FROM FIELD-EFFECT AND CAPACITANCE MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 263 - 265

[79] SURFACE OF AMORPHOUS-SEMICONDUCTORS AND THEIR CONTACTS WITH METALS [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3495 - 3505

[80] WEY HY, 1972, 11TH P INT C PHYS SE, P555

[71] EFFECT OF ADSORBATES AND INSULATING LAYERS ON THE CONDUCTANCE OF PLASMA DEPOSITED A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 575 - 580

[72] EFFECT OF ADSORBED GASES ON CONDUCTANCE OF AMORPHOUS FILMS OF SEMICONDUCTING SILICON-HYDROGEN ALLOYS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 353 - 356

[73] ADSORBATE EFFECTS ON THE ELECTRICAL CONDUCTANCE OF A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 435 - 462

[74] PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED A-SI-H [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 375 - 378

[75] CHARGE INJECTION INTO SIO2 DURING FIELD-EFFECT AND PHOTO-FIELD-EFFECT MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 440 - 445

[76] BULK AND SURFACE-STATES ANALYSIS IN A-SI-H BY SCHOTTKY AND MIS TUNNEL-DIODES CAPACITANCE AND CONDUCTANCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1392 - 1404

[77] PHOTOEMISSION STUDY OF EFFECT OF BULK DOPING AND OXYGEN EXPOSURE ON SILICON SURFACE STATES [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1512 - 1515

[78] PSEUDOGAP STATE DENSITY IN SPUTTERED A-SI-H FROM FIELD-EFFECT AND CAPACITANCE MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 263 - 265

[79] SURFACE OF AMORPHOUS-SEMICONDUCTORS AND THEIR CONTACTS WITH METALS [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3495 - 3505

[80] WEY HY, 1972, 11TH P INT C PHYS SE, P555