IMPROVED FEEDBACK CHARGE METHOD FOR QUASI-STATIC CV MEASUREMENTS IN SEMICONDUCTORS

被引：77

作者：

MEGO, TJ

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1986年 / 57卷 / 11期

关键词：

D O I：

10.1063/1.1139046

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

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页码：2798 / 2805

页数：8

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[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[2] CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[3] KERR DR, 1966, JUN C PROP US MIS ST
[4] ERROR IN SURFACE-STATE DETERMINATION CAUSED BY NUMERICAL DIFFERENTIATION OF Q-V DATA
KIROV, K
ALEXSANDROVA, S
MINCHEV, G
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 341 - 344
[5] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
KUHN, M
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +
[6] MARKGRAF W, 1984, PHYS HALBEITEROBERFL, V15, P73
[7] INSTRUMENTATION AND ANALOG IMPLEMENTATION OF THE Q-C METHOD FOR MOS MEASUREMENTS
NICOLLIAN, EH
BREWS, JR
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (11) : 953 - 962
[8] STATIC TECHNIQUE FOR PRECISE MEASUREMENTS OF SURFACE-POTENTIAL AND INTERFACE STATE DENSITY IN MOS STRUCTURES
ZIEGLER, K
KLAUSMANN, E
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 400 - 402