POSITRON DIAGNOSTICS OF VACANCY DEFECTS IN ELECTRON-IRRADIATED SILICON-CARBIDE

被引：0
|
作者：
GIRKA, AI
KULESHIN, VA
MOKRUSHIN, AD
MOKHOV, EN
SVIRIDA, SV
SHISHKIN, AV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 12期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1337 / 1339
页数：3
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