INFLUENCE OF THIN INTERFACIAL SILICON-OXIDE LAYERS ON THE SCHOTTKY-BARRIER BEHAVIOR OF TI ON SI(100)

被引：64

作者：

ABOELFOTOH, MO ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-10044 STOCKHOLM 70,SWEDEN

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5070 / 5078

页数：9

共 29 条

[1] SCHOTTKY-BARRIER HEIGHTS OF TI AND TISI2 ON N-TYPE AND P-TYPE SI(100) [J].

ABOELFOTOH, MO ;

TU, KN .

PHYSICAL REVIEW B, 1986, 34 (04) :2311-2318

[2] SCHOTTKY-BARRIER BEHAVIOR OF A TI-W ALLOY ON SI(100) [J].

ABOELFOTOH, MO .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2558-2565

[3]

ABOELFOTOH MO, UNPUB

[4] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES [J].

ASHOK, S ;

BORREGO, JM ;

GUTMANN, RJ .

SOLID-STATE ELECTRONICS, 1979, 22 (07) :621-631

[5] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[6] RELATION BETWEEN CURRENT-VOLTAGE CHARACTERISTICS AND INTERFACE STATES AT METAL-SEMICONDUCTOR INTERFACES [J].

BARRET, C ;

MURET, P .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :890-892

[7] INTERFACE STATES IN A CLEAVED METAL-SILICON JUNCTION [J].

BARRET, C ;

VAPAILLE, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4217-4222

[8] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].

BUTZ, R ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775

[9] PHYSICAL SIGNIFICANCE OF TO ANOMALIES IN SCHOTTKY BARRIERS [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :171-175

[10] CHARACTERIZATION OF INTERFACE STATES AT A AG-SI INTERFACE FROM CAPACITANCE MEASUREMENTS [J].

DENEUVILLE, A .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3079-3084

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