HIGHLY RELIABLE INGAP INGAALP VISIBLE-LIGHT EMITTING INNER STRIPE LASERS WITH 667 NM LASING WAVELENGTH

被引：40

作者：

OKUDA, H

ISHIKAWA, M

SHIOZAWA, H

WATANABE, Y

ITAYA, K

NITTA, K

HATAKOSHI, GI

KOKUBUN, Y

UEMATSU, Y

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1477 / 1482

页数：6

共 10 条

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[5] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[6]

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[8] ACCELERATED AGING CHARACTERISTICS OF INGAASP-INP BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3 MU-M [J].

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[9] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J].

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[10] HIGH-TEMPERATURE CW OPERATION OF VISIBLE LIGHT-EMITTING GAINP/ALGAINP INNER STRIPE LASER-DIODES [J].

SHIOZAWA, H ;

OKUDA, H ;

ISHIKAWA, M ;

HATAKOSHI, GI ;

UEMATSU, Y .

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