PROPERTIES OF INSB PHOTODIODES FABRICATED BY LIQUID-PHASE EPITAXY

被引：6

作者：

KANZAKI, K ^{[1
]}

YAHATA, A ^{[1
]}

MIYAO, W ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,SAIWA KU,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 07期

关键词：

D O I：

10.1143/JJAP.15.1329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1329 / 1334

页数：6

共 19 条

[1]

ABDUVAKHIDOV KM, 1967, SOV PHYS SEMICOND+, V1, P788

[2] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[3] DIFFUSION OF CADMIUM INTO INSB [J].

CATAGNUS, PC ;

POLANSKY, C ;

SPRATT, JP .

SOLID-STATE ELECTRONICS, 1973, 16 (05) :633-&

[4]

GOBELI GW, 1970, 2ND PURD U SEM RES Q, V5, P29

[5]

HILSUM C, 1961, SEMICONDUCTING 3-5 C

[6]

HILSUM C, 1970, SEMICONDUCTORS SEMIM, V5, P23

[7] RECOMBINATION CENTERS IN INSB [J].

HOLLIS, JEL ;

CHOO, SC ;

HEASELL, EL .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1626-&

[8] INFRARED ABSORPTION OF INDIUM ANTIMONIDE [J].

KAISER, W ;

FAN, HY .

PHYSICAL REVIEW, 1955, 98 (04) :966-968

[9]

KOSOGOV OV, 1971, SOV PHYS SEMICOND+, V4, P1387

[10]

KOSOGOV OV, 1969, SOV PHYS SEMICOND+, V2, P854

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