PHOTOEMISSION-STUDY OF SI(111)-GE(5X5) SURFACES

被引：59

作者：

MILLER, T ^{[1
]}

HSIEH, TC ^{[1
]}

CHIANG, TC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.6983

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6983 / 6989

页数：7

共 33 条

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[7] PHOTOEMISSION FROM SURFACE-ATOM CORE LEVELS, SURFACE DENSITIES OF STATES, AND METAL-ATOM CLUSTERS - A UNIFIED PICTURE [J].

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PHYSICAL REVIEW B, 1983, 27 (06) :3176-3200

[8] ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J].

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[9] TEMPERATURE-DEPENDENT SURFACE-STATES AND TRANSITIONS OF SI(111)-7X7 [J].

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PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2214-2217

[10] STRUCTURE OF SN/GE(111) FROM LOW-ENERGY ELECTRON-DIFFRACTION AND PHOTOEMISSION-STUDIES [J].

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