PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF FLUORINATED SILICON-NITRIDE

被引：25

作者：

FUJITA, S

TOYOSHIMA, H

OHISHI, T

SASAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 03期

关键词：

D O I：

10.1143/JJAP.23.L144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L144 / L146

页数：3

共 20 条

[1] VIBRATIONAL EXCITATIONS IN A-SI-F AND A-SI-(F,H) ALLOYS [J].

AGRAWAL, BK .

PHYSICAL REVIEW LETTERS, 1981, 46 (12) :774-778

[2] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J].

CHOW, R ;

LANFORD, WA ;

WANG, KM ;

ROSLER, RS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5630-5633

[3] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD [J].

FUJITA, S ;

ZHOU, NS ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L100-L102

[4]

Fujita S., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1351

[5] DEEP TRAP STATES IN SI3N4 LAYER ON SI SUBSTRATE [J].