VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION

被引：222

作者：

GAENSSLEN, FH ^{[1
]}

RIDEOUT, VL ^{[1
]}

WALKER, EJ ^{[1
]}

WALKER, JJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 03期

关键词：

D O I：

10.1109/T-ED.1977.18712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：218 / 229

页数：12

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