NEW FABRICATION PROCESS FOR JOSEPHSON TUNNEL-JUNCTIONS WITH (NIOBIUM NITRIDE, NIOBIUM) DOUBLE-LAYERED ELECTRODES

被引：46
作者：
SHOJI, A
SHINOKI, F
KOSAKA, S
AOYAGI, M
HAYAKAWA, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 11期
关键词：
D O I：
10.1063/1.93378
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1097 / 1099
页数：3
相关论文
共 8 条
[1]   FABRICATION AND PROPERTIES OF NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS [J].
BROOM, RF ;
LAIBOWITZ, RB ;
MOHR, TO ;
WALTER, W .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :212-222
[2]  
GURVITCH M, 1981, IEDM115 TECH DIG
[3]   SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS [J].
KROGER, H ;
SMITH, LN ;
JILLIE, DW .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :280-282
[4]   NIOBIUM JOSEPHSON JUNCTIONS WITH DOPED AMORPHOUS SILICON BARRIERS [J].
KROGER, H ;
POTTER, CN ;
JILLIE, DW .
IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) :488-489
[5]   JOSEPHSON JUNCTIONS WITH NB/AL COMPOSITE ELECTRODES [J].
LAIBOWITZ, RB ;
MAYADAS, AF .
APPLIED PHYSICS LETTERS, 1972, 20 (07) :254-+
[6]  
SHINOKI F, 1981, APPL PHYS LETT, V38, P314
[7]   TUNNELING CHARACTERISTICS OF NBN-NBN JOSEPHSON-JUNCTIONS WITH GLOW-DISCHARGE-PRODUCED AMORPHOUS-SILICON BARRIERS [J].
SHOJI, A ;
SHINOKI, F ;
KOSAKA, S ;
HAYAKAWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L587-L590
[8]   JOSEPHSON TUNNEL-JUNCTIONS WITH NB, NBN DOUBLE-LAYERED ELECTRODES [J].
SHOJI, A ;
SHINOKI, F ;
KOSAKA, S ;
HAYAKAWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04) :L192-L194
1