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BROAD-BAND MICROWAVE MEASUREMENTS ON GAAS TRAVELING-WAVE TRANSISTORS
被引:5
作者
:
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP, PRINCETON, NJ 08540 USA
RCA CORP, PRINCETON, NJ 08540 USA
DEAN, RH
[
1
]
DREEBEN, AB
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP, PRINCETON, NJ 08540 USA
RCA CORP, PRINCETON, NJ 08540 USA
DREEBEN, AB
[
1
]
HUGHES, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP, PRINCETON, NJ 08540 USA
RCA CORP, PRINCETON, NJ 08540 USA
HUGHES, JJ
[
1
]
MATARESE, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP, PRINCETON, NJ 08540 USA
RCA CORP, PRINCETON, NJ 08540 USA
MATARESE, RJ
[
1
]
NAPOLI, LS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP, PRINCETON, NJ 08540 USA
RCA CORP, PRINCETON, NJ 08540 USA
NAPOLI, LS
[
1
]
机构
:
[1]
RCA CORP, PRINCETON, NJ 08540 USA
来源
:
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
|
1973年
/ MT21卷
/ 12期
关键词
:
D O I
:
10.1109/TMTT.1973.1128135
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:805 / 809
页数:5
相关论文
共 6 条
[1]
REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS
[J].
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
DEAN, RH
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(11)
:1148
-+
[2]
GAAS TRAVELING-WAVE AMPLIFIER AS A NEW KIND OF MICROWAVE TRANSISTOR
[J].
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
DEAN, RH
;
MATARESE, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
MATARESE, RJ
.
PROCEEDINGS OF THE IEEE,
1972,
60
(12)
:1486
-1502
[3]
TRAVELLING-WAVE AMPLIFIER USING THIN EPITAXIAL GAAS LAYER
[J].
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
DEAN, RH
;
DREEBEN, AB
论文数:
0
引用数:
0
h-index:
0
DREEBEN, AB
;
KAMINSKI, JF
论文数:
0
引用数:
0
h-index:
0
KAMINSKI, JF
;
TRIANO, A
论文数:
0
引用数:
0
h-index:
0
TRIANO, A
.
ELECTRONICS LETTERS,
1970,
6
(24)
:775
-+
[4]
DEAN RH, TO BE PUBLISHED
[5]
2-PORT MICROWAVE AMPLIFICATION IN LONG SAMPLES OF GALLIUM ARSENIDE
[J].
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
ROBSON, PN
;
KINO, GS
论文数:
0
引用数:
0
h-index:
0
KINO, GS
;
FAY, B
论文数:
0
引用数:
0
h-index:
0
FAY, B
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(09)
:612
-+
[6]
ELECTRON MOBILITY IN GAAS1-XPX ALLOYS (ABSENCE OF ALLOY SCATTERING EPITAXIAL LAYERS E/T)
[J].
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
TIETJEN, JJ
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
WEISBERG, LR
.
APPLIED PHYSICS LETTERS,
1965,
7
(10)
:261
-&
←
1
→
共 6 条
[1]
REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS
[J].
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
DEAN, RH
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(11)
:1148
-+
[2]
GAAS TRAVELING-WAVE AMPLIFIER AS A NEW KIND OF MICROWAVE TRANSISTOR
[J].
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
DEAN, RH
;
MATARESE, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
MATARESE, RJ
.
PROCEEDINGS OF THE IEEE,
1972,
60
(12)
:1486
-1502
[3]
TRAVELLING-WAVE AMPLIFIER USING THIN EPITAXIAL GAAS LAYER
[J].
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
DEAN, RH
;
DREEBEN, AB
论文数:
0
引用数:
0
h-index:
0
DREEBEN, AB
;
KAMINSKI, JF
论文数:
0
引用数:
0
h-index:
0
KAMINSKI, JF
;
TRIANO, A
论文数:
0
引用数:
0
h-index:
0
TRIANO, A
.
ELECTRONICS LETTERS,
1970,
6
(24)
:775
-+
[4]
DEAN RH, TO BE PUBLISHED
[5]
2-PORT MICROWAVE AMPLIFICATION IN LONG SAMPLES OF GALLIUM ARSENIDE
[J].
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
ROBSON, PN
;
KINO, GS
论文数:
0
引用数:
0
h-index:
0
KINO, GS
;
FAY, B
论文数:
0
引用数:
0
h-index:
0
FAY, B
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(09)
:612
-+
[6]
ELECTRON MOBILITY IN GAAS1-XPX ALLOYS (ABSENCE OF ALLOY SCATTERING EPITAXIAL LAYERS E/T)
[J].
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
TIETJEN, JJ
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
WEISBERG, LR
.
APPLIED PHYSICS LETTERS,
1965,
7
(10)
:261
-&
←
1
→