ELECTRONIC-STRUCTURE OF GAAS-GA1-XALXAS QUANTUM WELL AND SAWTOOTH SUPERLATTICES

被引：85
作者：
JAROS, M
WONG, KB
GELL, MA
机构：
来源：
PHYSICAL REVIEW B | 1985年 / 31卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.31.1205
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：1205 / 1207
页数：3
相关论文
共 7 条
[1]   NEW TRANSIENT ELECTRICAL-POLARIZATION PHENOMENON IN SAWTOOTH SUPER-LATTICES [J].
CAPASSO, F ;
LURYI, S ;
TSANG, WT ;
BETHEA, CG ;
LEVINE, BF .
PHYSICAL REVIEW LETTERS, 1983, 51 (25) :2318-2321
[2]  
GELL MA, UNPUB J PHYS C
[3]   NEW ELECTRON-STATES IN GAAS-GAXAL1-XAS SUPERLATTICE [J].
JAROS, M ;
WONG, KB .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (29) :L765-L769
[4]  
Jaros M, 1982, DEEP LEVELS SEMICOND
[5]   THE ELECTRONIC-STRUCTURE AND STABILITY OF LOCALIZED DEFECTS IN SEMICONDUCTORS .1. THEORY [J].
KIRTON, MJ ;
BANKS, PW .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (14) :2475-2486
[6]  
WONG KB, UNPUB J PHYS C
[7]   INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 DIFFERENT SEMICONDUCTORS [J].
ZHU, QG ;
KROEMER, H .
PHYSICAL REVIEW B, 1983, 27 (06) :3519-3527
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