LOW-THRESHOLD MBE GAAS/ALGAAS QUANTUM WELL LASERS WITH DRY-ETCHED MIRRORS

被引:14
作者
MANNOH, M [1 ]
YUASA, T [1 ]
ASAKAWA, K [1 ]
SHINOZAKI, K [1 ]
ISHII, M [1 ]
机构
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
关键词
D O I
10.1049/el:19850542
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:769 / 770
页数:2
相关论文
共 7 条
[1]   GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J].
ASAKAWA, K ;
SUGATA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :402-405
[2]  
BOUADMA N, 1985, 9TH P IEEE INT SEM L, P180
[3]   GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].
COLDREN, LA ;
IGA, K ;
MILLER, BI ;
RENTSCHLER, JA .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683
[4]   GALNASP-LNP LASER WITH MONOLITHICALLY INTEGRATED MONITORING DETECTOR [J].
IGA, K ;
MILLER, BI .
ELECTRONICS LETTERS, 1980, 16 (09) :342-343
[5]   GALNASP-INP DH LASERS AND RELATED FABRICATING TECHNIQUES FOR INTEGRATION [J].
IGA, K ;
KAMBAYASHI, T ;
WAKAO, K ;
MORIKI, K ;
KITAHARA, C .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :707-710
[6]   GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J].
MERZ, JL ;
LOGAN, RA ;
SERGENT, AM .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) :72-82
[7]   CW OPERATION OF 1.5-MU-M GAINASP-INP BURIED-HETEROSTRUCTURE LASER WITH A REACTIVE-ION-ETCHED FACET [J].
MIKAMI, O ;
AKIYA, H ;
SAITOH, T ;
NAKAGOME, H .
ELECTRONICS LETTERS, 1983, 19 (06) :213-215