MODELING OF CHEMICAL-REACTIONS UNDER NONEQUILIBRIUM HALOGENATED ELECTRICAL-DISCHARGE CONDITIONS

被引:6
作者
SLOVETSKY, DI
机构
[1] Institute of Petrochemical Syntheses, Academy of Sciences, 117071, Moscow
关键词
D O I
10.1351/pac199062091729
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Statement of the problem and results are discussed concerning modelling of the chemical reactions under nonequilibrium electric discharge plasma conditions in SF6, CF4, CCl4 and SP6+02 mixtures. As the base for modelling the inner plasma parameters as measured are used in line with the quantitative study of chemical reaction kinetics including reactions with participation of the halogen atoms and halogenated radicals and molecules. © 1990 IUPAC
引用
收藏
页码:1729 / 1742
页数:14
相关论文
共 27 条
[1]  
BISSHOPS T, 1987, ISPC 8, V1, P620
[2]   PLASMA-CHEMICAL REACTIONS IN WEAKLY DECOMPOSED CCL4 [J].
BREITBARTH, FW ;
TILLER, HJ ;
REINHARDT, R .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1985, 5 (04) :293-316
[3]  
DAGOSTINO RD, 1981, PLASMA CHEM PLASMA P, V1, P232
[4]  
DDIAS THV, 1988, ESCAMPIG 88 LISBON, P329
[5]  
DODONOV AF, 1987, CHEM PHYS, V6, P1713
[6]  
DODONOV AF, 1987, CHEM PHYS, V6, P1562
[7]  
FLAMM DL, 1984, J APPL PHYS, V56, P1522
[8]   MONTE-CARLO SIMULATION OF ELECTRON PROPERTIES IN RF PARALLEL PLATE CAPACITIVELY COUPLED DISCHARGES [J].
KUSHNER, MJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :4958-4965
[9]   A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .1. A MODEL FOR THE ETCHING OF SI AND SIO2 IN CNFM/H2 AND CNFM/O2 PLASMAS [J].
KUSHNER, MJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :2923-2938
[10]   A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .2. PROBE MEASUREMENTS OF ELECTRON PROPERTIES IN AN RF PLASMA-ETCHING REACTOR [J].
KUSHNER, MJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :2939-2946