DIFFERENTIAL PHOTOCURRENT TRANSIENT MEASUREMENTS IN A-SI-H

被引：22

作者：

PANDYA, R

SCHIFF, EA

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90580-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：297 / 300

页数：4

共 9 条

[1] DETERMINATION OF THE DENSITY OF GAP STATES - FIELD-EFFECT AND SURFACE-ADSORPTION [J].

FRITZSCHE, H .

SOLAR CELLS, 1980, 2 (03) :289-300

[2] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J].

HUANG, CY ;

GUHA, S ;

HUDGENS, SJ .

PHYSICAL REVIEW B, 1983, 27 (12) :7460-7465

[3]

JACKSON WB, 1983, B AM PHYS SOC, V28, P258

[4] COMPARISON OF THE DISPERSION PARAMETERS FROM TIME-OF-FLIGHT AND PHOTOINDUCED MIDGAP ABSORPTION-MEASUREMENTS ON SPUTTERED A-SI-H [J].

KIRBY, PB ;

PAUL, W ;

RAY, S ;

TAUC, J .

SOLID STATE COMMUNICATIONS, 1982, 42 (07) :533-535

[5] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

PHYSICAL REVIEW B, 1982, 25 (06) :4313-4316

[6] TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J].

ORENSTEIN, J ;

KASTNER, MA ;

VANINOV, V .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01) :23-62

[7] RECOMBINATION IN DISORDERED SOLIDS [J].

SCHER, H .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :547-550

[8] TRAP-CONTROLLED DISPERSIVE TRANSPORT AND EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON [J].

SCHIFF, EA .

PHYSICAL REVIEW B, 1981, 24 (10) :6189-6192

[9]

TIEDJE T, 1980, SOLID STATE COMMUN, V37, P49

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