PHOTOLUMINESCENCE OF COMPLEXES IN EPITAXIAL P-TYPE GAAS HEAVILY DOPED WITH GERMANIUM

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作者：
ZHURAVLEV, KS
TEREKHOV, AS
YAKUSHEVA, NA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 05期
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O469 [凝聚态物理学];
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070205 ;
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页码：491 / 492
页数：2
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