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- [1] EFFECT OF DYNAMIC PRESSURES ON SELF-BOUND SILICON-CARBIDE SOVIET POWDER METALLURGY AND METAL CERAMICS, 1988, 27 (08): : 673 - 675
- [2] HIGH-TEMPERATURE OPERATION OF SILICON-CARBIDE MOSFET JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (02): : 310 - 311
- [3] KINETICS OF HIGH-TEMPERATURE OXIDATION OF SILICON-CARBIDE IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 1987, 30 (07): : 54 - 57
- [4] STRUCTURAL-CHANGES INDUCED BY HELIUM ION IRRADIATION IN SILICON-CARBIDE CRYSTALS JOURNAL OF ELECTRON MICROSCOPY, 1985, 34 (03): : 215 - 216
- [7] INFLUENCE OF HIGH-TEMPERATURE ANNEALING ON LUMINESCENCE OF SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1941 - 1942
- [9] HIGH-TEMPERATURE OXIDATION OF SILICON-CARBIDE BASED MATERIALS OXIDATION OF METALS, 1987, 27 (1-2): : 83 - 93
- [10] HIGH-TEMPERATURE ION-IMPLANTATION OF SILICON-CARBIDE NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 335 - 338